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History is being made! Samsung beats TSMC and starts shipping 3nm GAA chipsets

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For now, Moore’s Law, the observation of semiconductor legend Gordon Moore, remains in effect. Moore, the co-founder of Fairchild Semiconductor and Intel, originally noted in 1965 that the number of transistors in an integrated circuit (IC) would double each year. He later revised that in the 1970s by stating that the number of transistors would double every two years.

The process node used by top foundries such as TSMC and Samsung to build advanced chips gives us a sense of how Moore’s Law works. The smaller the process node, the greater the number of transistors that can fit in an IC. And that’s important, because the higher the number of transistors, the more powerful and energy-efficient a chip is.
Samsung started shipping its 10nm SoCs in 2016. In 2018, it began mass production of its 7nm chipsets. By 2020, Samsung began mass production of 5nm chipsets, and now Samsung (through wccftech) is the first to start shipping 3nm GAA chipsets beating rival TSMC. Samsung is not only the first to provide 3nm chips, but is also the first to provide these chips equipped with GAA or gate all-round transistors.

With GAA there is more control over the power resulting in greater energy efficiency. TSMC is still using the previous generation FinFET transistor design for its 3nm SoCs, which will ship in the second half of this year. The world’s leading independent foundry will begin using GAA with its 2nm process node, which it hopes to start delivering to customers by 2026.

Samsung was so excited to beat TSMC with its 3nm deliveries that the company held a ceremony at its Hwaseong Campus, in Gyeonggi-do, attended by several Samsung executives and Korean politicians. The first batch of 3nm SoCs will not be shipped to smartphone manufacturers. Instead, they will be used in equipment used by cryptocurrency miners, with the new 3nm GAA enabling a major reduction in power consumption.

Ultimately, the 3nm GAA process node will be used to produce smartphone chips, including Samsung’s own Exynos 2300 and possibly Qualcomm Snapdragon 8 Gen 2 SoCs. The 3nm GAA process node reduces power consumption by up to 45% and increases performance by as much as 23% compared to the 5nm node. A second-generation variant of the 3nm GAA chips is expected to reduce power consumption by up to 50% and increase performance by up to 30%.

What this means for you is the availability of more powerful handsets with longer battery life.

In a release, Samsung said: “On the 25th, Samsung Electronics held a 3nm foundry product shipment ceremony using the next-generation transistor GAA (Gate All Around) technology on the V1 line (EUV only) at Hwaseong Campus, Gyeonggi-do event. attended by about 100 people, including Minister of Commerce, Industry and Energy Changyang Lee, suppliers, fables, Samsung Electronics DS division head, Kyeong-hyeon Kye (chairman), and executives and employees, and encouraged executives and employees to participate in 3nm GAA R&D and mass production.”

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